设备详细介绍

电子束曝光系统

Electron Beam Lithography System

发布时间:2013-01-14 | 【打印】 【关闭】

 

 

 号:VistecEBPG5000+

 

 能:

  • 各种光学光刻模板的制备
    Fabrication of versatilephotomasks 
  • 各种碎片、50 mm100 mm基片微纳米图案的直写,最小线宽<10 nm
    Direct write of micro- andnanopatterns on 50 mm, 100 mm and pieces
    wafers with minimum line width smaller than 10 nm

主要指标:

  • 图形发生器频率(Pattern generator frequency)25 MHz 
  • 束斑位置稳定性(Beam position stability)< 50 nm/h
  • 束流稳定性(Current stability)<±0.5%/h
  • 主场稳定性(Main field stability)< 40 nm (for 400μmmain fieldwithin0.5 h)
  • 场畸变(In field distortion)<±15 nm(for400μmmain field)
  • 分辨率(Resolution)< 8 nmline width(@100kV)
    <±3 nm(for <10nm lines with in 100μmfields@100kV) 
    <±3 nm(for <15nm lines with in 250μm fields@100kV)
    • 场拼接精度(Stitching accuracy): ±15nm(for 100μmmain field@100kV)
      ±20nm (for 250μmmain field@100kV
      ±25nm (for 400μmmain field@100kV)
    • 套刻精度(Overlay accuracy):   ±15nm(for 100μmmain field@100kV)
       ±20nm (for 250μmmain field@100kV)
       ±25nm (for 400μmmain field@100kV)
    • 直写精度(Direct write accuracy): ±15nm(for 100μmmain field@100kV)
       ±20nm (for 250μm
      main field@100kV)
      ±25nm (for 400μmmain field@100kV)

     

    技术特点:

    • 高曝光速度和稳定性,可大面积曝光
      Large areas to be patterned with highspeed and good stability
    • 高分辨率
      High resolution