设备详细介绍

双面对准接触式紫外光刻机

Double Sided Mask Aligner System

发布时间:2013-01-16 | 【打印】 【关闭】
 

  型   号:MA6

  功     能:

  • 可用于标准光刻
    Standard lithography applications
  • 可用于Ⅲ-Ⅴ族易碎化合物、不规则碎片、透明基片的光刻
    Applicable to fragile III-V compounds, thinned or warped wafers, transparent substrates, as well as pieces

 

  主要指标:

  • 曝光波长(Wavelength)UV 400
  • 曝光面积(Effective exposure size)100 mm(4-inch)
  • 分辨率(Resolution):≤0.8 µm
  • 正面套刻精度(Top side alignment accuracy):≤ ±0.5 µm
  • 背面套刻精度(Bottom side alignment accuracy):≤ ±0.5 µm
  • 光强均匀度(Intensity Uniformity):≤±5for 100 mm wafers
  • 曝光模式 (Printing modes)接近、硬接触、软接触和真空4种模式 (proximity,hard, soft and vacuum contact modes)
  • 曝光时间(Exposure duration)0 ~ 999.9 s

  技术特点:

  • 双面对准,双面加工
    Double sided mask alignment, and pattern printing on both sides of the substrate
  • 具有衍射减小光学系统,并可键合对准升级
    Diffraction reducing exposure optics and a bond aligning option